ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 1819AB25 25 watts, 25 volts, class ab personal 1808 - 1880 mhz general description the 1819AB25 is a common emitter transistor capable of providing 25 watts of class ab, rf output power over the band 1808-1880 mhz. this transistor is specifically designed for personal communications base station amplifier applications. it includes input prematching and utilizes gold metalization and high value emitter ballasting to provide high reliability and supreme ruggedness. . case outline 55ct, style 2 common emitter absolute maximum ratings maximum power dissipation @ 25 c 87 watts o maximum voltage and current bvces collector to emitter voltage 60volts bvebo emitter to base voltage 3.5 volts ic collector current 10.0 amps maximum temperatures storage temperature - 65 to + 150 c o operating junction temperature + 200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin pg h c vswr 1 power out power input power gain collector efficiency load mismatch tolerance f =1880 mhz vce = 25 volts icq = 0.27 amps as above 25 7.0 7.5 43 5.0 3:1 watt watt db % bvces bvebo ices h fe cob q jc collector to emitter breakdown emitter to base breakdown collector leakage current dc - current gain output capacitance thermal resistance ic = 50 ma ie = 10 ma vce = 27 volts vce = 5 v, ic = 0.7 a f =1 mhz, vcb = 28 v tc = 25 c o 60 3.5 20 28 10 100 2.0 volts volts ma pf c/w o initial issue february 1995
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